Page 1
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2516
ESCRIPTION
D
·With TO-220C package
·Low collector saturation voltage
·Wide area of safe operation
APPLICATIONS
·Switching regulators
·DC-DC converters
·High frequency power amplifiers
PINNING
PIN DESCRIPTION
1 Base
2
3 Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 150 V
CBO
V
Collector-emitter voltage Open base 60 V
CEO
V
Emitter-base voltage Open collector 12 V
EBO
I
C
ICM Collector current-peak 10 A
I
B
P
T
Collector current 5 A
Base current 2.5 A
Ta=25 1.5
Total power dissipation
TC=25 30
W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
Page 2
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2516
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=3.0A ; IB=0;L=1mH 60 V
Collector-emitter saturation voltage IC=3A; IB=0.3A 0.6 V
Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V
Collector cut-off current VCB=100V ;IE=0 10 µA
Collector cut-off current
V
CE
Ta=125
10
1
µA
mA
=100V; VBE=-1.5V
Emitter cut-off current VEB=10V ;IC=0 10 µA
DC current gain IC=0.2 A ; VCE=5V 40
DC current gain IC=3 A ; VCE=5V 40 200
Switching times
ton
Turn-on time 0.5 µs
Storage time 2.5 µs
Fall time
Classifications
FE-2
h
t
s
t
f
M L K
40-80 60-120 100-200
I
=3A; IB1=-IB2=0.3A
C
=17@; VCC=50V
R
L
2
0.5 µs
Page 3
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2516
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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