Datasheet 2SC2512 Datasheet (HIT)

Application

• VHF Amplifier

• VHF TV Tuner, Mixer

Outline

TO-92 (2)

2SC2512

Silicon NPN Triple Diffused

1. Base

2. Emitter

3. Collector

3

2

1

2SC2512

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector to emitter breakdown

V

(BR)CEO

voltage
Emitter to base breakdown

V

(BR)EBO

voltage
Collector cutoff current I
Collector to emitter saturation

V

CBO

CE(sat)

voltage
DC current transfer ratio h

FE

Reverse transfer capacitance Cre — 0.35 0.45 pF VCB = 10 V, Emitter common,

Gain bandwidth product f
Base time constant r

T

• CC— — 20 ps VCB = 10 V, IC = 5 mA,

bb’

Conversion gain CG 16 20 — dB VCC = 12 V, IC = 2 mA,

Noise figure NF — 3.8 5.5 dB VCC = 12 V, IC = 2 mA,

30 — — V IC = 10 µA, IE = 0

20 — — V IC = 1 mA, RBE = ∞

3——VI

— — 0.5 µAV
——1VI

30 — — V

600 900 — MHz VCE = 10 V, IC = 10 mA

30 V
20 V
3V
50 mA
300 mW

= 10 µA, IC = 0

E

= 10 V, IE = 0

CB

= 20 mA, IB = 4 mA

C

= 10 V, IC = 10 mA

CE

f = 1 MHz

f = 31.8 MHz

f

= 200 MHz,

in

f

= 260 MHz,

OSC

f

= 60 MHz

out

f

= 260 MHz, Rg = 50 Ω,

OSC

f

= 200 MHz

in

2

Maximum Collector Dissipation Curve

300

(mW)

C

FE

2SC2512

DC Current Transfer Ratio vs.

Collector Current

100

VCE = 10 V

80

200

100

Collector Power Dissipation P

0

50

Ambient Temperature Ta (°C)

Gain Bandwidth Product vs.

Collector Current

1,000

800

(MHz)

T

600

400

200

100 150

VCE = 10 V

60

40

20

DC Current Transfer Ratio h

0

12 5

Collector Current I

Reverse Transfer Capacitance vs.

Collector to Base Voltage

5

(pF)

re

2

1.0

0.5

0.2

10 20 50

(mA)

C

f = 1 MHz

Emitter Common

Gain Bandwidth Product f

0

12 5

Collector Current I

10 20 50

(mA)

C

Reverse Transfer Capacitance C

0.1
12 5

10 20 50

Collector to Base Voltage V

CB

(V)

3

2SC2512

Conversion Gain vs. Collector Current

30

VCC = 12 V
f

= 260 MHz (0 dBm)

26

22

osc

f

= 200 MHz

in

f

= 60 MHz

out

R

= 50 Ω

g

18

14

Conversion Gain CG (dB)

10

024

6810

Collector Current IC (mA)

10

Noise Figure NF (dB)

Noise Figure, Conversion Gain vs.

Oscillating Injection Voltage

IC = 2 mA
V

CC

8

6

f

osc

= 200 MHz

f

in

R

g

4

2

CG

Noise Figure vs. Collector Current

10

8

6

4

Noise Figure NF (dB)

2

0

1234

Collector Current IC (mA)

= 12 V

= 260 MHz

= 50 Ω

NF

VCC = 12 V
f

= 260 MHz (0 dBm)

osc

f

= 200 MHz

in

R

= 50 Ω

g

30

20

Conversion Gain CG (dB)

5

0

–15 –5

Oscillating Injection Voltage V

(dBm)

inj

10

5

4

Conversion Gain, Noise Figure Test Circuit

Input

f

OSC

L

Input

L

1

Parts Specification

: 1.5 pF

C

1

C

: 57 pF

2

: 17 pF

C

3

C

: 1000 pF

4

C

: 2200 pF

5

: 22 pF

C

6

C

: 80 pF

7

C

: 18 pF

8

: 20 pF

C

9

2SC2512

R

C

1

C

2

2

C

3

R

1

L

3

C

4

V

BB

2

L

4

C6C7C

C

5

V

CC

Output

C

L

8

5

9

: 330 Ω (1/4 W)

R

1

: 560 Ω (1/4 W)

R

2

L

: φ0.8 mm Copper wire with Enamel 8 Turns

1

inside dia φ3 mm
L

: φ0.8 mm Copper wire with Enamel 5 Turns

2

inside dia φ3 mm
L3 : φ0.5 mm Copper wire with Enamel 3.5 Turns
inside dia φ3 mm
L

: Outside dia φ5 mm used Ferrite Core, φ0.2 mm

4

Copper wire with Enamel 6.5 Turns

: φ0.2 mm Copper wire with Enamel 13 Turns

L

5

inside dia φ5 mm

5

Unit: mm

0.60 Max

0.45 ± 0.1

4.8 ± 0.3

1.27

2.54

0.7

5.0 ± 0.2

2.3 Max

12.7 Min

3.8 ± 0.3

0.5

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-92 (2)
Conforms
Conforms

0.25 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX