Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2507
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·Fast Switching Speed
·Collector-Emitter Saturation Voltage-
: V
CE(sat)
APPLICATIONS
·Designed for use in high-voltage, high-speed , power
switching in inductive circuit , they are particularly suited
for 115 and 220V switchmode applications such as switching regulator’s, inverters.
ABSOLUTE MAXIMUM RATINGS(T
= 400V(Min)
= 0.7V(Max.)@ IC= 10A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
BM
C
T
J
stg
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 20 A
Collector Current-Peak 40 A
B Base Current-Continuous 7 A
Base Current-Peak 14 A
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150
Storage Temperature Range -55~150
200 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 0.625 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2507
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(
V
BE(
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 400 V
Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 0.7 V
)
sat
Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V
)
sat
Collector Cutoff Current VCB= 500V; IE= 0 100 μA
Collector Cutoff Current VCE= 320V; IB= 0 100 μA
Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA
DC Current Gain IC= 10A; VCE= 2V 15
DC Current Gain IC= 20A; VCE= 2V 8
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 20 MHz
t
on
t
stg
t
f
Turn-on Time 1.0 μs
= 10A, IB1= -IB2= 2A
I
Storage Time 3.0 μs
Fall Time
C
= 3Ω; V
R
L
BB2
= 4V
0.7 μs
isc Website：www.iscsemi.cn
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