Page 1
INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC2351
DESCRIPTION
·Low Noise
NF = 1.5 dB TYP. ; @ f = 1 GHz
·High Maximum Available Gain
MAG = 14 dB TYP. ; @ f = 1 GHz
APPLICATIONS
·Designed for use as UHF oscillators and a UHF mixer in a
tuner of a TV receiver.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
T
stg
Collector-Base Voltage 25 V
Collector-Emitter Voltage 12 V
Emitter-Base Voltage 3 V
Collector Current-Continuous 70 mA
Collector Power Dissipation
C
J
=25℃
@T
C
Junction Temperature 150
Storage Temperature Range -65~150
0.25 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC2351
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
CBO
I
EBO
h
FE
f
T
C
OB
︱S
21e
NF Noise Figure IC= 5mA ; VCE= 10V;f= 1.0GHz 1.5 3.0 dB
MAG Maximum Available Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 14 dB
Collector Cutoff Current VCB= 15V; IE= 0 0.1 μA
Emitter Cutoff Current VEB= 2.0V; IC= 0 0.1 μA
DC Current Gain IC= 20mA ; VCE= 10V 40 200
Current-Gain—Bandwidth Product IC= 20mA;VCE= 10V 4.5 GHz
Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.75 1.0 pF
2
Insertion Power Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 9 11 dB
︱
h
Classification
FE
Class E/P F/Q
Marking R2 R3
h
FE
40-120 100-200
isc Website：www.iscsemi.cn
2
Page 3
INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC2351
isc Website：www.iscsemi.cn
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