Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2293
DESCRIPTION
·High Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Power switching
·Power amplification
·Power driver
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER MAX UNIT
= 400V (Min)
=25℃)
a
V
V
V
I
I
T
CBO
CEO
EBO
I
C
CM
I
B
BM
P
C
T
stg
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 10 A
Collector Current-Peak 20 A
B Base Current-Continuous 4 A
Base Current-Peak 8 A
Collector Power Dissipation
@T
=25℃
C
Junction Temperature 150 ℃
j
Storage Temperature Range -55~150 ℃
THERMAL CHARACTERISTICS
100 W
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.25
isc Website：www.iscsemi.cn
℃/W
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2293
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
h
FE-1
h
FE-2
I
CBO
I
CEO
I
EBO
f
(sat)
(sat)
T
Collector-Emitter Sustainig Voltage IC= 200mA; IB= 0 400 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.7 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V
DC Current Gain IC= 5A; VCE= 2V 15
DC Current Gain IC= 10A; VCE= 2V 8
Collector Cutoff Current VCB= 500V; IE= 0 0.1 mA
Collector Cutoff Current VCE= 400V; IB= 0 0.1 mA
Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 20 MHz
Switching Times
t
on
t
stg
t
f
Turn-On Time 1.0
Storage Time 3.0
Fall Time
isc Website：www.iscsemi.cn
IC= 5A; IB1=- IB2= 1A;
RL= 5Ω; V
BB2
= 4V
μs
μs
0.7
μs
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