Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2245
DESCRIPTION
·High Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Power switching
·Power amplification
·Power driver
ABSOLUTE MAXIMUM RATINGS(T
= 400V (Min)
=25℃)
a
SYMBOL PARAMETER MAX UNIT
V
V
V
I
T
CBO
CEO
EBO
I
C
CM
I
B
P
C
T
stg
Collector-Base Voltage 450 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 10 A
Collector Current-Peak 20 A
B Base Current-Continuous 4 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 200
j
Storage Temperature Range -65~200
100 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.0
isc Website：www.iscsemi.cn
℃/W
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2245
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)
V
BE
(sat)
h
FE
I
CBO
I
CEO
I
EBO
Switching Times
t
r
Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH 400 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.2 V
Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V
DC Current Gain IC= 4A; VCE= 5V 10
Collector Cutoff Current
Collector Cutoff Current VCE= 400V; IB= 0 5.0 mA
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
Rise Time 1.0
= 450V; IE= 0
V
CB
TC=125℃
1.0
4.0
mA
μs
t
stg
t
f
Storage Time 2.0
Fall Time
isc Website：www.iscsemi.cn
I
=4A; IB1=- IB2= 0.8A
C
μs
1.0
μs
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