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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2027
DESCRIPTION ·
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For high voltage ,power switching and
TV horizontal output applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 7.5 A
PT Total power dissipation TC=25℃ 50 W
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 5 V
Tj Junction temperature 175 ℃
T
Storage temperature -65~200 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2027
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=0.1A; IB=0 800 V
Emitter-base breakdown votage IE=1mA; IC=0 5 V
Collector-emitter saturation voltage IC=4.0 A;IB=1.3 A 5.0 V
Base-emitter saturation voltage IC=4.0 A;IB=1.3 A 1.5 V
Collector cut-off current VCB=600V;IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 10 μA
DC current gain IC=1A ; VCE=5V 8 36
DC current gain IC=4.5A ; VCE=5V 2.25
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2027
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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