Datasheet 2SC1907 Datasheet (HIT)

Application

UHF TV Tuner, Local oscillator

Outline

TO-92 (2)

2SC1907

Silicon NPN Epitaxial Planar

1. Emitter

2. Collector

3. Base

3

2

1

2SC1907

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P

CBO

CEO

EBO

C

E

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector to emitter breakdown

V

(BR)CEO

voltage
Emitter to base breakdown

V

(BR)EBO

voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation

V

CBO

FE

CE(sat)

voltage
Collector output capacitance Cob — 1.0 2.0 pF VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product f
Base time constant r

Oscillation output power P

T

• CC—1025psVCB = 10 V, IC = 10 mA,

bb’

out

30 — — V IC = 10 µA, IE = 0

19 — — V IC = 3 mA, RBE = ∞

2——VI

— — 0.5 µAV
40 — — V
— 0.2 1.0 V IC = 20 mA, IB = 4 mA

900 1100 — MHz VCE = 10 V, IC = 10 mA

—8 —mWVCB = 10 V, IC = 10 mA,

30 V
19 V
2V
50 mA
–50 mA
300 mW

= 10 µA, IC = 0

E

= 10 V, IE = 0

CB

= 10 V, IC = 10 mA

CE

f = 31.8 MHz

f = 930 MHz

2

2SC1907

Maximum Collector Dissipation Curve

300

(mW)

C

200

100

Collector Power Dissipation P

0

50

Ambient Temperature Ta (°C)

Typical Transfer Caracteristics

20

VCE = 10 V

16

(mA)

C

12

100 150

20

130

120

16

Typical Output Caracteristics

(mA)

C

12

8

4

Collector Current I

0

48

Collector to Emitter Voltage V

DC Current Transfer Ratio vs.

200

V

= 10 V

FE

160

CE

120

110

100

90

80

70

60

50

40
30
20

IB = 10 µA

Collector Current

P

C

= 300 mW

12 16 20

(V)

CE

8

4

Collector Current I

0

0.2 0.4

Base to Emitter Voltage V

0.6 0.8 1.0
(V)

BE

80

40

DC Current Transfer Ratio h

0

0.1 0.2 0.5 1.0
Collector Current I

21052050

(mA)

C

3

2SC1907

Gain Bandwidth Product vs.

Collector Current

1,200

1,000

(MHz)

T

VCE = 10 V

800

600

400

200

Gain Bandwidth Product f

0

0.5 1.00.2 2
Collector Current I

Input Admittance Characteristics

0

1,200 MHz

–10

(mS)

ib

–20

1,000

–30

–40

VCB = 10 V
Output end short

–50

Input Suceptance b

–60

510015

Input Conductance g

5 10 20 50 100

(mA)

C

yib = gib+jb

900

800

600

I

= 5 mA

C

10 mA

15 mA

20 25 30

(mS)

ib

ib

400

Base Time Constant vs.

Collector Current

200

100

(ps)

C

•C

bb'

50

VCB = 10 V
f = 31.8 MHz

20

10

5

Base Time Constant r

2

0.1

0.2 0.5 1.0
Collector Current I

Reverse Transfer Admittance

Characteristics

yrb = grb+jb

rb

400 MHz

600

800

900
VCB = 10 V
Input end short

1,200

–1.0 –0.8–1.2 –0.6

1,000

= 15 mA

C

I

10 mA

–0.4 –0.2 0

Reverse Transfer Conductance g

2510

(mA)

C

0

(mS)

rb

–1

–2

–3

–4

(mS)

rb

–5

Reverse Transfer Suceptance b

–6

5 mA

4

2SC1907

Forward Transfer Admittance

Characteristics

60

(mS)

fb

50

40

400 MHz

10 mA

5 mA

I

C

= 15 mA

30

20

VCB = 10 V

10

Output end short

Forward Transfer Suceptance b

0

–20 –10–30 0

Forward Transfer Conductance g

yfb = gfb+jb

600

800

900

1,000

1,200

10 20 30

(mS)

fb

Output Admittance Characteristics

15

(mS)

ob

10

yob = gob+jb

fb

ob

1,000

1,200

900

800

5

= 5 mA

Output Suceptance b

C

I

0

600

400 MHz

10 mA

15 mA

1.5 3.0

Output Conductance g

VCB = 10 V
Input end short

4.5 6.0 7.5
(mS)

ob

5

Unit: mm

0.60 Max

0.45 ± 0.1

4.8 ± 0.3

1.27

2.54

0.7

5.0 ± 0.2

2.3 Max

12.7 Min

3.8 ± 0.3

0.5

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-92 (2)
Conforms
Conforms

0.25 g

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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