Datasheet 2SC1906 Datasheet (HIT)

Page 1
Application
VHF amplifier
Mixer, Local oscillator
Outline
TO-92 (2)
2SC1906
Silicon NPN Epitaxial Planar
1. Emitter
2. Collector
3
2
1
Page 2
2SC1906
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Emitter current I Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage Collector to emitter breakdown
V
(BR)CEO
voltage Emitter to base breakdown
V
(BR)EBO
voltage Collector cutoff current I DC current transfer ratio h Gain bandwidth product f
CBO
FE
T
Collector output capacitance Cob 1.0 2.0 pF VCB = 10 V, IE = 0, f = 1 MHz Collector to emitter saturation
V
CE(sat)
voltage Base time constant r
CC—1025psVCB = 10 V, IC = 10 mA,
bb’
Power gain PG 33 dB VCE = 10 V,
30 V IC = 10 µA, IE = 0
19 V IC = 3 mA, RBE =
2——VI
0.5 µAV 40 V 600 1000 MHz VCE = 10 V, IC = 10 mA
0.2 1.0 V IC = 20 mA, IB = 4 mA
18 dB VCE = 10 V,
30 V 19 V 2V 50 mA –50 mA 300 mW
= 10 µA, IC = 0
E
= 10 V, IE = 0
CB
= 10 V, IC = 10 mA
CE
f = 31.8 MHz
f = 45 MHz
I
= 5 mA
C
f = 200 MHz
I
= 5 mA
C
2
Page 3
2SC1906
Maximum Collector Dissipation Curve
300
(mW)
C
200
100
Collector Power Dissipation P
0
50
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
20
VCE = 10 V
16
(mA)
C
12
8
100 150
20
Typical Output Characteristics
180
16
(mA)
C
12
8
4
Collector Current I
0
Collector to Emitter Voltage V
DC Current Transfer Ratio vs.
Collector Current
120
100
VCE = 10 V
FE
80
60
40
160
84
140
120
100
80 60
40
IB = 20 µA
12 16 20
P
C
= 300 mW
(V)
CE
4
Collector Current I
0
Base to Emitter Voltage V
0.6 0.8 1.0
0.40.2
BE
(V)
20
DC Current Transfer Ratio h
0
250.5 1.00.1 0.2
Collector Current I
10 20 50 100
(mA)
C
3
Page 4
2SC1906
20
16
(mA)
C
12
8
4
Collector Current I
0
Collector to Emitter Voltage V
200
100
(ps)
C
•C
50
bb'
Gain Bandwidth Product Curve
700
800
900
= 1,000 MHz
f
T
600 500
12 16 20
84
CE
Base Time Constant vs.
Collector Currnt
VCB = 10 V f = 31.8 MHz
(V)
Gain Bandwidth Product vs.
Collector Current
1,200
1,000
(MHz)
T
VCE = 10 V f = 100 MHz
800
600
400
200
Gain Bandwidth Product f
0
Collector Current I
Input Admittance vs. Frequency
12
IC = 1 mA
10
(mS)
ie
8
2 mA
10 30 100
31.00.1 0.3 (mA)
C
8 mA
4 mA
12 mA
250
200
20
10
5
Base time Constant r
2
0.1 0.2 0.5 1.0 Collector Current I
2510
(mA)
C
6
4
Input Suceptance b
2
50
f = 25 MHz
0
Input Conductance g
100
yie = gie+jb VCE = 9 V
4682
ie
ie
10 12
(mS)
4
Page 5
2SC1906
Output Admittance vs. Frequency
6
5
(mS)
IC = 1 mA
oe
4
2
8
4
200
3
2
100
1
Output Suceptance b
50
f = 25 MHz
0
0.4 0.6 0.80.2
Output Conductance g
Forward Transfer Admittance vs.
Frequency
(mS)
fe
20
0
IC = 1 mA
2
–20
–40
f =
–60
25 MHz
–80
–100
Forward Transfer Suceptance b
–120
200
150
100
Forward Transfer Conductance g
12
250
yoe = goe+jb VCE = 9 V
1.0 1.2
(mS)
oe
yfe = gfe+jb VCE = 9 V
4
80
50
100 120 140806020 400
oe
(mS)
fe
25
Reverse Transfer Admittance vs.
Frequency
(mS)
re
–0.4
–0.8
–1.2
0
IC = 21 mA
yre = gre+jb VCE = 9 V
250
re
8
200
4
f = 25 MHz
50
100
2
1
–1.6
Reverse Transfer Suceptance b
–2.0
–0.02–0.04–0.06–0.08–0.10 0
Reverse Transfer Conductance gre (mS)
Conversion Gain vs. Local Oscillating
Injection Voltage
17
fe
16
15
VCB = 9 V I
= 3.5 mA
14
13
8
12
12
Conversion Gain CG (dB)
11
E
f
= 200 MHz
s
f
= 245 MHz
osc
f
= 45 MHz
IF
Emitter Inject
10
inj
0.3
(V)
0.1 0.20
Injection Voltage V
5
Page 6
2SC1906
Conversion Gain vs. Emitter Current
18
16
14
VCB = 9 V V
= 150 mV
12
10
8
Conversion Gain CG (dB)
6
inj
f
= 200 MHz
s
f
= 245 MHz
osc
f
= 45 MHz
IF
Emitter Inject
4
0 –1–2–3–4–5–6–7
Emitter Current I
(mA)
E
6
Page 7
Unit: mm
0.60 Max
0.45 ± 0.1
4.8 ± 0.3
1.27
2.54
0.7
5.0 ± 0.2
2.3 Max
12.7 Min
3.8 ± 0.3
0.5
Hitachi Code JEDEC EIAJ
(reference value)
Weight
TO-92 (2) Conforms Conforms
0.25 g
Page 8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223
Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533
Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Loading...