Datasheet 2SC1893 Specification

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1893

DESCRIPTION

·With TO-3 package

·High breakdown voltage

APPLICATIONS

·For line-operated horizontal deflection
output applications

PINNING(see Fig.2)

PIN DESCRIPTION

1

2 Emitter

3 Collector

Base

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL PARAMETER CONDITIONS VALUE UNIT

V

CBO

V

CEO

V

EBO

IC Collector current 3.5 A

PC Collector power dissipation TC=25℃ 50 W

Collector-base voltage Open emitter 1500 V

Collector-emitter voltage Open base 500 V

Emitter-base voltage Open collector 5 V

Tj Junction temperature 150 ℃

T

Storage temperature -55~150 ℃

stg

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1893

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V

CEO(SUS)

V

(BR)EBO

V

V

Collector-emitter sustaining voltage IC=0.1A ;IB=0 500 V

Emitter-base breakdown voltage IE=1mA ;IC=0 5 V

Collector-emitter saturation voltage IC=3A; IB=0.6A 5.0 V

CEsat

Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V

BEsat

I

Collector cut-off current VCB=750V; IE=0 50 μA

CBO

I

Emitter cut-off current VEB=5V; IC=0 50 μA

EBO

h

DC current gain IC=1A ; VCE=5V 10 40

FE

fT Transition frequency IC=0.1A ; VCE=10V 3 MHz

COB Collector output capacitance IE=0; VCB=10V;f=1MHz 95 pF

2

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1893

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

3