Datasheet 2SC1890A Datasheet (HIT)

2SC1890, 2SC1890A

Silicon NPN Epitaxial

Application

• Low frequency high voltage amplifier

• Complementary pair with 2SA893/A

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SC1890, 2SC1890A

Absolute Maximum Ratings (Ta = 25°C)

Ratings

Item Symbol 2SC1890 2SC1890A Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

2SC1890 2SC1890A

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to emitter
breakdown voltage

Collector cutoff current I

DC current tarnsfer ratio hFE*
Base to emitter voltage V
Collector to emitter

saturation voltage
Gain bandwidth product f
Collector output

capacitance
Noise figure NF — 2 10 — 2 10 dB VCE = 6 V, IC = 50 µA,

Note: 1. The 2SC1890/A is grouped by hFE as follows.

V

(BR)CEO

CBO

90 — — 120 — — V IC = 1 mA, RBE = ∞

— — 0.5 — — — µAVCB = 75 V, IE = 0
—————0.5µAVCB = 100 V, IE = 0

1

250 — 1200 250 — 1200 VCE = 12 V, IC = 2 mA
— — 0.75 — — 0.75 V VCE = 12 V, IC = 2 mA
— — 0.5 — — 0.5 V IC = 10 mA, IB = 1 mA

— 200 — — 200 — MHz VCE = 12 V, IC = 2 mA

V

BE

CE(sat)

T

Cob — 1.6 — — 1.6 — pF VCB = 25 V, IE = 0,

90 120 V
90 120 V
55V
50 50 mA
300 300 mW

f = 1 MHz

R

= 50 kΩ, f = 1 kHz

g

DEF

250 to 500 400 to 800 600 to 1200

See characteristic curves of 2SC1775 and 2SC1775A.

2

Maximum Collector Dissipation Curve

300

(mW)

C

200

100

Collector Power Dissipation P

0

50

Ambient Temperature Ta (°C)

2SC1890, 2SC1890A

100 150

3

Unit: mm

0.60 Max

0.5 ± 0.1

4.8 ± 0.3

1.27

2.54

0.7

5.0 ± 0.2

2.3 Max

12.7 Min

3.8 ± 0.3

0.5

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-92 (1)
Conforms
Conforms

0.25 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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products.

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