Page 1
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SILICON
UHF BAND
NPN EPITAXIAL
POWER
AMPLIFIER
PLANAR TYPE
APPLICATIONS
FEATURES
Output Power
.
MAXIMUM
RATINGS (Ta=25°C)
P
:
=l. 2W(Min.
(f=470MHz,
VCC=12.6V, I
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage v
Collector Current
Collector
Power Dissipation
(Tc=25°C)
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(Ta=25°C)
CHARACTERISTIC
Collector
Cut-off
Current
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Current
DC
Collector
Output
Voltage
Gain h
Output
Capacitance
Power
Power Gain
Collector
Efficiency
Series Equivalent Input
Impedance
Series Equivalent
Output
Impedance
»i=0.3W)
SYMBOL RATING
VcBO
VCEO
EBO
ic
PC
T
J
Tstg
-65 -175
SYMBOL
V
TCBO
v
(BR)CB0
v
(BR)
v
(BR)EB0
FE
Cob
Po
Gpe
*c
Z
IN
ZOUT
CEO
=15V, I
CB
I
=lmA, I
C
I
=10mA, I
c
I
=lmA, I
E
VCE=5V,
V
B=10V,
C
(Fig.)
V
=12.6V,
CC
Pi=0.3W
V
c=12.6V,
C
P =1.2W
UNIT
40
20
4
0.5
5
175
TEST
V
V
V
A
W
°C
°c
CONDITION
=0
E
=0
E
=0
B
=0
C
I
=0.1A 20
C
=0,
I
f=lMHz
E
f=470MHz,
f=470MHz,
00.45
l^jL
45A
JEDEC
EIAJ
TOSHIBA
MAX.
09.39
8.4
MAX
5
r
j
05.08
[\
^
JJ
/%
V^
°/
1.
EMITTER
2. BASE
3. COLLECTOR
-
TO
-
TO
5
,
-
8B1B
2
-
40
20
4
-
6 7
60
-
5+J6.5
22-
-
TYP.
6.5
1.5
:
-
- -
- -
- -
- - -
-
Weight
MIN.
1.2
J25
Unit in
-j
13
3
I
CASE)
(
39
-
TB
1.2g
mm
r
X
<
a
r^
to
d
-
«j
a
o
0$
H
5B
MAX. UNIT
1 yA
V
V
V
pF
10
-
w
-
dB
-
%
-
Q
-
Q
363
TOSHIBA
CORPORATION
Page 2
2SC1001
Fig. P
TEST
ci
C
,C
2
C3.C4
C6,C8
C7
Ll
L2
L3
L4.L5
CIRCUIT
*(S)
~10pF
~30pF
5
~25pF
O.Ol^F
lOOOpF
(60.8
«5l
<tl
RFC
srr^
j£-
SILVER. PLATED
SILVER PLATED
SILVER PLATED
COPPER WIRE,
COPPER WIRE,
25 LENGTH, STRAIGHT
COPPER WIRE, 20
-O
6ID, 2T
LENGTH, STRAIGHT
=5
R
0.Q
L
V
12.6
+
P
~ V
CC
TOSHIBA
?0
2.4
=
f
7 MHz
4
, 7c
40^
1
6
0.S
n
o 0.2 a4 a6
CORPORATION
"*"
»
4
POWER
INPUT
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-
/S-Q
"'
Pi
7c=lJ8.6V
(W)
Pi
=
f
0MHz
4 7
2.4
*.
=
V
13.5V
nn
»
-
80
40
£
y /
^-
a 5
Q3
ai
SUPPLY VOLTAGE V
—
—
3G4
12 16
cc
(V)
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