Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB965
DESCRIPTION ·
·With TO-3PFa package
·Complement to type 2SD1288
APPLICATIONS
·For use in low frequency and
power amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter -120 V
Collector-emitter voltage Open base -120 V
Emitter-base voltage Open collector -5 V
Collector current -7 A
Collector power dissipation
Junction temperature 150
℃)
T
=25℃
C
70 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB965
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE -1
h
FE -2
C
h
Collector-emitter breakdown voltage IC=-25mA ;IB=0 -120 V
Collector-emitter saturation voltage IC=-4A ;IB=-0.4A B -1.5 V
Base-emitter saturation voltage IC=-4A ;IB=-0.4A B -2.0 V
Collector cut-off current VCB=-120V; IE=0 -50
Emitter cut-off current VEB=-5V; IC=0 -50
DC current gain IC=-1A ; VCE=-5V 60 320
DC current gain IC=-4A ; VCE=-5V 20
OB
f
T
Output capacitance IE=0 ; VCB=-10V;f=1MHz 150 pF
Transition frequency IC=-1A ; VCE=-5V 75 MHz
classifications
FE-1
μA
μA
R Q P
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB965
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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