Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB891F
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SD1189F
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -40 V
Collector-emitter voltage Open base -32 V
Emitter-base voltage Open collector -5 V
Collector current (DC) -2 A
Collector current-Peak -3 A
Collector power dissipation
℃)
Ta=25℃
TC=25℃
1.2
W
5
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB891F
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
h
Collector-emitter breakdown voltage IC=-1mA ;IB=0 B -32 V
I
Collector-base breakdown voltage
Emitter-base breakdown voltage
=-50μA ;IE=0
C
I
=-50μA ;IC=0
E
-40 V
-5 V
Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.5 -0.8 V
Collector cut-off current VCB=-20V; IE=0 -1.0
Emitter cut-off current VEB=-4V; IC=0 -1.0
μA
μA
DC current gain IC=-0.5A ; VCE=-3V 82 390
Transition frequency IC=-0.5A ; VCE=-5V;f=30MHz 100 MHz
Collector output capacitance IE=0; f=1MHz ; VCB=-10V 50 pF
Classifications
FE-2
P Q R
82-180 120-270 180-390
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB891F
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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