Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB869
DESCRIPTION ·
·With
·Complement to type 2SD961
·Low collector saturation voltage
·High collector current capability
APPLICATIONS
·For power switching applications
PINNING
TO-220C package
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) -5 A
ICM Collector current-Peak -10 A
PC Collector dissipation TC=25℃ 40 W
Collector-base voltage Open emitter -130 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -7 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -50~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB869
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=-10mA; IB=0 -80 V
Collector-emitter saturation voltage IC=-4A; IB=-0.2A -0.5 V
Base-emitter saturation voltage IC=-4A; IB=-0.2A -1.5 V
Collector cut-off current VCB=-100V; IE=0 -10 μA
Emitter cut-off current VEB=-5V; IC=0 -50 μA
DC current gain IC=-0.1A ; VCE=-2V 45
DC current gain IC=-2A ; VCE=-2V 60 260
fT Transition frequency IC=-0.5A ; VCE=-10V 30 MHz
Switching times
ton Turn-on time 0.13 μs
t
Storage time 0.5 μs
stg
IC=-2A ; IB1=-IB2=-0.2A
tf Fall time
h
Classifications
FE-2
R Q P
60-120 90-180 130-260
2
0.13 μs
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB869
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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