Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB849A
DESCRIPTION ·
·With TO-3PFa package
·Complement to type 2SD1110A
·Wide area of safe operation
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
P
C
C
Collector-base voltage Open emitter -130 V
Collector-emitter voltage Open base -130 V
Emitter-base voltage Open collector -7 V
Collector current -7 A
Collector power dissipation TC=25℃ 80 W
℃)
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB849A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE -2
C
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -130 V
Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V
Base-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V
Collector cut-off current VCB=-120V; IE=0 -50 μA
Emitter cut-off current VEB=-6V; IC=0 -50 μA
DC current gain IC=-20mA ; VCE=-5V 20
DC current gain IC=-1A ; VCE=-5V 40 200
OB
f
T
Output capacitance IE=0 ; VCB=-10V;f=1MHz 340 pF
Transition frequency IC=-0.2A ; VCE=-5V 14 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB849A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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