Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB731
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SD809
·Low collector saturation voltage
APPLICATIONS
·Audio frequency power amplifier
·Low speed switching
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B Base current (DC) -0.5 A
B
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -50 V
Emitter-base voltage Open collector -6 V
Collector current (DC) -1 A
Collector current-Peak -2 A
℃)
Ta=25℃
P
T
T
j
T
stg
Total power dissipation
TC=25℃
Junction temperature 150
Storage temperature -55~150
1.0
W
10
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB731
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
CEsat
BEsat
I
CBO
I
EBO
h
h
C
FE-1
FE-2
f
T
OB
Collector-emitter saturation voltage IC=-1.0A; IB=-50mA -0.5 -0.6 V
Base-emitter saturation voltage IC=-1.0A; IB=-50mA -1.0 -1.2 V
Collector cut-off current VCB=-50V; IE=0 -0.1
Emitter cut-off current VEB=-6V; IC=0 -0.1
DC current gain IC=-0.1A ; VCE=-2V 135 600
DC current gain IC=-1A ; VCE=-1V 40
Transition frequency IC=-10mA ; VCE=-2V 75 MHz
Collector output capacitance IE=0; f=1MHz ; VCB=-10V 25 pF
h
Classifications
FE-1
L K F E
μA
μA
135-270 200-400 300-480 360-600
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB731
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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