Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB675
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type 2SD635
APPLICATIONS
·High power switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -0.2 A
B
P
C
T
j
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -5 V
Collector current -7 A
Collector power dissipation
Junction temperature 150
℃)
T
=25℃
C
40 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB675
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
h
h
FE-1
FE-2
Collector-emitter breakdown voltage IC=-50mA, IB=0 -60 V
Collector-emitter saturation voltage IC=-3A ,IB=-6mA B -0.95 -1.5 V
Collector-emitter saturation voltage IC=-7A ,IB=-14mA B -1.3 -2.0 V
Base-emitter saturation voltage IC=-3A ,IB=-6mA B -1.55 -2.5 V
Collector cut-off current VCB=-60V, IE=0 -0.1 mA
Emitter cut-off current VEB=-5V; IC=0 -4.0 mA
DC current gain IC=-3A ; VCE=-3V 2000 15000
DC current gain IC=-7A ; VCE=-3V 1000
Switching times
t
on
t
stg
Turn-on time 0.8 μs
Storage time 2.0 μs
I
=-IB2=-6mA
B1
=-45V,RL=15Ω
V
CC
t
f
Fall time
2
2.5 μs
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB675
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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