Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB668
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
APPLICATIONS
·For use in power amplifier and
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector; connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -5 V
Collector current -3 A
Collector current-peak -5 A
Collector power dissipation
℃)
T
=25℃
C
25 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB668
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=-10mA, IB=0 -100 V
Collector-base breakdown voltage IC=-1mA, IE=0 -100 V
Emitter-base breakdown voltage IE=-2mA, IC=0 -5 V
Collector-emitter saturation voltage IC=-2A ,IB=-8mA B -2.0 V
Base-emitter saturation voltage IC=-2A ,IB=-8mA B -2.5 V
Collector cut-off current VCB=-120V, IE=0 -100
Collector cut-off current VCE=-100V, IB=0 -500
μA
μA
Emitter cut-off current VEB=-5V, IC=0 -2 mA
DC current gain IC=-1A ; VCE=-3V 2000
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB668
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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