Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors 2SB613
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High Power Dissipation: P
·High Current Capability
·Complement to Type 2SD583
APPLICATIONS
·Designed for high power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= -250V(Min)
(BR)CEO
= 150W(Max)@TC=25℃
C
=25℃)
a
V
V
V
T
CBO
CEO
EBO
I
C
I
B
P
C
T
J
stg
Collector-Base Voltage -250 V
Collector-Emitter Voltage -250 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -15 A
B Base Current -5 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 200
Storage Temperature -65~200
150 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors 2SB613
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
I
CBO
I
EBO
h
(sat)
FE
Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -250 V
Collector-Emitter Breakdown Voltage IC= -1mA ;IE= 0 -250
Emitter-Base Breakdown Voltage IE=-1mA ;IC=0 -5 V
Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V
Collector Cutoff Current VCB= -250V; IE= 0 -0.1 mA
Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA
DC Current Gain IC= -1A ; VCE= -2V 35 200
isc Website：www.iscsemi.cn
Page 3
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors 2SB613
isc Website：www.iscsemi.cn
Loading...