Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB550
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplification
·For low speed and power switching
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -70 V
Emitter-base voltage Open collector -5 V
Collector current -5 A
T
Collector power dissipation
Junction temperature 150
=25℃
C
25 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB550
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
Collector-base breakdown voltage IC=-1mA; IE=0 -100 V
Collector-emitter breakdown voltage IC=-10mA; IB=0 -70 V
Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.0 V
Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V
Collector cut-off current VCB=-80V; IE=0 -0.1 mA
Emitter cut-off current VEB=-5V; IC=0 -0.1 mA
FE
f
T
DC current gain IC=-1A ; VCE=-5V 30 200
Transition frequency IC=-0.1A ; VCE=-10V 5 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB550
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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