Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB521
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·High current switching applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
T
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -8 V
Collector current -5 A
Total power dissipation TC=25℃ 43 W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB521
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=-10mA , IB=0 B -60 V
Emitter-base breakdown voltage IE=-1mA , IC=0 -8 V
Collector-emitter saturation voltage IC=-3A; IB=-0.15A -0.4 V
Base-emitter saturation voltage IC=-3A; IB=-0.15A -1.2 V
Collector cut-off current VCB=-50V; IE=0 -1 μA
Emitter cut-off current VEB=-8V; IC=0 -1 μA
DC current gain IC=-2.5A ; VCE=-2V 50
f
T
Transition frequency IC=-0.2A ; VCE=-5V 7 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB521
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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