Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB506
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
APPLICATIONS
·Low frequency power amplification
·Power switching application
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -7 V
Collector current -5 A
Collector power dissipation TC=25℃ 60 W
T
j
T
stg
Junction temperature 100 ℃
Storage temperature -55~100 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB506
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
Collector-emitter breakdown voltage IC=-10mA; IB=0 -100 V
Emitter-base breakdown voltage IE=-1mA; IC=0 -7 V
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.0 V
Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V
Collector cut-off current VCB=-100V; IE=0 -0.1 mA
Emitter cut-off current VEB=-7V; IC=0 -0.1 mA
FE
f
T
DC current gain IC=-1A ; VCE=-5V 35 200
Transition frequency IC=-0.3A ; VCE=-10V 20 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB506
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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