Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB449
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Wide area of safe operation
APPLICATIONS
·Power amplifier applications
·Power switching applications
·DC-DC converters
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter -50 V
Collector-emitter voltage Open base -50 V
Emitter-base voltage Open collector -7 V
Collector current -3.5 A
T
Collector power dissipation
Junction temperature 150
=50℃
C
22.5 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB449
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -50 V
Collector-base breakdown voltage IC=-1mA ;IE=0 -50 V
Emitter-base breakdown voltage IE=-1mA ;IC=0 -7 V
Collector-emitter saturation voltage IC=-3A; IB=-0.3A -0.7 V
Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.2 V
Collector cut-off current VCB=-50V; IE=0 -10 μA
Emitter cut-off current VEB=-7V; IC=0 -10 μA
DC current gain IC=-3A ; VCE=-2V 20 85
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB449
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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