Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1403
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low collector saturation voltage
·DARLINGTON
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
Collector-base voltage Open emitter -120 V
Collector -emitter voltage Open base -120 V
Emitter-base voltage Open collector -7 V
Collector current -6 A
Collector current-peak -12 A
Collector power dissipation
℃)
Ta=25℃
TC=25℃
2
W
25
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1403
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
V
(BR)CBO
Collector-emitter breakdown voltage
Collector-base breakdown voltage
=-25mA; RBE=∞
C
I
=-100μA; IE=0
C
-120 V
-120 V
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CBO
I
CEO
h
V
Emitter-base breakdown voltage IE=-50mA; IC=0 -7 V
Collector-emitter saturation voltage IC=-3A ;IB=-6mA B -1.5 V
Collector-emitter saturation voltage IC=-6A ;IB=-60mA B -3.0 V
Base-emitter saturation voltage IC=-3A ;IB=-6mA B -2.0 V
Base-emitter saturation voltage IC=-6A ;IB=-60mA B -3.5 V
Collector cut-off current VCB=-100V; IE=0 -10
V
Collector cut-off current
FE
DC current gain IC=-3A ; VCE=-3V 1000 20000
Diode forward voltage ID=6A 3.0 V
D
=-100V; RBE=∞
CE
-10
μA
μA
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1403
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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