Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1345
DESCRIPTION ·
·With TO-247 package
·Complement to type 2SD2062
·Low collector saturation voltage
APPLICATIONS
·For power drvier and general purpose
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-247) and
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -5 V
Collector current -7 A
Collector power dissipation TC=25℃ 80 W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1345
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
h
Collector-emitter breakdown voltage IC=-10mA; IB=0 -80 V
Collector-base breakdown voltage IC=-50μA; IE=0 -100 V
Emitter-base breakdown voltage IE=-50μA; IC=0 -5 V
Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V
Base-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.5 V
Collector cut-off current VCB=-100V; IE=0 -10 μA
Emitter cut-off current VEB=-5V; IC=0 -10 μA
DC current gain IC=-1A ; VCE=-5V 60 320
Transition frequency IC=-0.5A ; VCE=-10V 12 MHz
Classifications
FE
D E F
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1345
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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