Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1339
DESCRIPTION
·With TO-220C package
·High DC current gain
·Low saturation voltage
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier and
power driver applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
Collector-base voltage Open emitter -120 V
Collector -emitter voltage Open base -120 V
Emitter-base voltage Open collector -6 V
Collector current -6 A
Collector current-peak -10 A
Collector power dissipation
℃)
Ta=25℃
TC=25℃
2
W
40
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1339
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
I
CBO
I
EBO
h
C
Collector-emitter breakdown voltage IC=-5mA; IB=0 -120 V
Collector-base breakdown voltage IC=-50μA; IE=0 -120 V
Collector-emitter saturation voltage IC=-3A ;IB=-6mA B -1.5 V
Collector cut-off current VCB=-120V; IE=0 -100 μA
Emitter cut-off current VEB=-5V; IC=0 -3.0 mA
FE
f
T
OB
DC current gain IC=-2A ; VCE=-3V 2000 20000
Transition frequency IC=-0.5A ; VCE=-5V 12 MHz
Output capacitance IE=0 ; VCB=-10V;f=1MHz 70 pF
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB1339
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm)
3
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