Page 1
SHINDENGEN
Darlington Transistor
OUTLINE DIMENSIONS
2SB1285
(T15J10)
-15A PNP
RATINGS
●Absolute Maximum Ratings
Item Symbol
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
Mounting Torque
Case : MTO-3P
Unit : mm
Conditions
Ratings Unit
Tstg -55～+150 ℃
Tj +150 ℃
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
T
TOR
Tc = 25℃
(Recommended torque : 0.5N･m）
-100 V
-100 V
-7 V
-15A
-22 A
-1 A
-2 A
100 W
0.8 N･m
●Electrical Characteristics (Tc=25℃)
Item Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
I
CBO
I
CEO
I
EBO
h
FE
VCE(sat)
VBE(sat)
θjc
f
T
ton Max 1
ts
tf
Conditions
VCB = -100V
VCE = -100V
VEB = -7V
V
= -3V, IC = -10A
CE
IC = -10A
IB = -20mA
Junction to case
V
= 10V, IC = -1.5A
CE
IC = -15A
IB1 = IB2 = -20mA
RL = 2Ω
V
= -4V
BB2
Ratings Unit
Max -0.1 mA
Max -0.1
Max -5 mA
Min 1,500
Max 15,000
Max -1.5 V
Max -2.0 V
Max 1.25 ℃/W
TYP 20 MHz
Max 4 μs
Max 2
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C
- I
FE
h
= −3V
CE
V
-22
[A]
C
2SB1285
100000
50°C
FE
10000
100°C
Tc = 150°C
1000
25°C
0°C
−25°C
−55°C
100
10
DC Current Gain h
Collector Current I
-0.01 -0.1 -1 -10
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BE
[V]
Base-Emitter Voltage V
-3
-2.5
Saturation Voltage
-2
-1.5
-1
-0.5
0
-2
[A]
B
2SB1285
−3A −7A −10A −15A −22A
=
C
I
−1.5A
-3
-2.5
CE
[V]
−22A
-2
−15A
−10A
−7A
−3A
=
I
-1.5
C
−1.5A
-1
Base Current I
Tc = 25°C
0
-0.5
-0.0001 -0.001 -0.01 -0.1 -1
Collector-Emitter Voltage V
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[µs]
SW
2SB1285
1
Switching Time - I
t
s
t
f
C
Switching Time t
0.1
t
on
Collector Current IC [A]
IB1 = IC/750
IB2 = IC/750
V
= −4V
BB2
V
= −30V
CC
Tc = 25°C
-15-10-50
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[µs]
SW
2SB1285
1
Switching Time - Tc
t
s
t
f
Switching Time t
0.1
0 50 100 150
t
on
I
C
I
B1
I
B2
V
R
Case Temperature Tc [°C]
= −15A
= −20mA
= −20mA
= −4V
BB2
= 2Ω
L
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2
10
1
10
0
10
-1
10
Transient Thermal Impedance
2SB1285
10
1
0.1
-2
Time t [s]
10
-3
10
-4
10
-5
10
0.01
Transient Thermal Impedance θjc(t) [°C/W]
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-22
-15
-10
[A]
C
-1
2SB1285
DC
PT limit
Forward Bias SOA
1ms10ms
I
limit
S/B
150µs
Collector Current I
-0.1
Tc = 25°C
Single Pulse
-0.01
-1 -10 -100
Collector-Emitter Voltage VCE [V]
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2SB1285 Collector Current Derating
100
80
60
40
Collector Current Derating [%]
20
PT limit
I
S/B
limit
VCE = fixed
0
0 50 100 150
Case Temperature Tc [°C]
Page 9
-30
-25
-20
[A]
C
-15
2SB1285
Reverse Bias SOA
Collector Current I
-10
-5
I
= −0.005I
B1
I
= −0.15A
B2
V
= −5V
BB2
Tc < 150°C
0
Collector-Emitter Voltage VCE [V]
C
-140-120-100-80-60-40-200
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