Page 1
2SB1189 / 2SB1238
Transistors
Medium power transistor (−80V, −0.7A)
2SB1189 / 2SB1238
!!!!Features
1) High breakdown voltage, BV
high current, I
=−0.7A.
C
=−80V, and
CEO
2) Complements the 2SD1767 / 2SD1859.
!!!!Absolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 When mounted on a 40×40×0.7 mm ceramic board.
∗2 Printed circuit board 1.7 mm thick, collector plating 1cm
Parameter
2SB1189
2SB1238
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
!!!!Packaging specifications and h
Type
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
Denot
es hFE
∗
2SB1189
MPT3
PQR
BD
∗
T100
1000
2
or larger.
FE
2SB1238
−55~+150
ATV
PQR
−
TV2
2500
Limits
−80
−80
−0.7
150
!!!!External dimensions (Units : mm)
2SB1189
1.5
3.0
Unit
V
−5
0.5
2
1
V
V
A
W
∗1
∗2
°C
°C
ROHM : MPT3
EIAJ : SC-62
2SB1238
ROHM : ATV
0.65Max.
1.5
(2)
(1)
2.54
4.0
1.0
2.5
0.5
(1)
0.4
(2)
0.5
(3)
0.4
0.4
6.8
0.5
(3)
2.54
(1) Base
(2) Collector
(3) Emitter
2.5
4.4
0.9
1.0
14.5
1.6
4.5
1.5
0.451.05
Taping specifications
(1) Emitter
(2) Collector
(3) Base
!!!!Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance
Parameter
transfer ratio
Symbol Min. Typ. Max. Unit Conditions
CBO
BV
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
h
FE 82
fT
Cob
−80
−80
V
−
−
−
−
−
−0.2
100
−
−
−0.5
−
−0.5
−0.4
390
−
−
14
20
−5
−
−
−
−
−
C=−50µA
I
V
I
C=−2mA
V
I
E=−50µA
V
CB=−50V
µA
V
EB=−4V
µA
V
C/IB=−500mA/−50mA
I
CE/IC=−3V/−0.1A
− V
MHz
V
CE=−10V, IE=50mA, f=100MHz
pF
V
CB=−10V, IE=0A, f=1MHz
Loading...