2SB1197K
z
z
z
z
z
Transistors
Low Frequency Transistor (32V, 0.8A)
2SB1197K
Features
1) Low V
CE(sat).
CE(sat) 0.5V
V
I
C / IB= 0.5A / 50mA
2) IC = 0.8A.
3) Complements the 2SD1781K.
Structure
Epitaxial planar type
PNP silicon transistor
External dimensions (Unit : mm)
±
0.2
2.9
1.9
±
0.2
0.95
0.95
(2)
(1)
(3)
All terminals have the
same dimensions
+
0.1
0.4
−0.05
ROHM : SMT3
EIAJ : SC-59
Denotes h
∗
FE
Abbreviated symbol: AH
+
0.2
1.1
−0.1
0.8
±
0.1
0.15
+
0.1
−0.06
0~0.1
0.6
∼
0.3
0.2
0.2
±
−0.1
+
2.8
1.6
∗
(1) Emitter
(2) Base
(3) Collector
z
Absolute maximum ratings (Ta=25qC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol Limits Unit
V
V
V
Collector current
Collector power dissipation
Junction temperature
Storage temperature
z
Electrical characteristics (T a=25qC)
Tstg
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
CBO
CEO
EBO
I
P
Tj
C
C
BV
BV
BV
I
I
V
CE(sat)
Cob
CBO
EBO
h
f
CBO
CEO
EBO
FE
T
−40 V
−
−
−
−0.5
−0.5
−0.5
390
−−
30
V
V
A
W
°C
°C
VI
V
V
μ
A
μ
A
V
−
MHz
pF
C
= −50μA
I
C
= −1mA
I
E
= −50μA
V
CB
V
EB
C/IB
I
CE
V
CE
V
V
CB
−32
−5
−0.8
0.2
150
−55 to 150
Min.
Typ. Max. Unit Conditions
−40
−32
−5
120
−
−
−
−
−
−
−
−
−
−
200
−
12
= −20V
= −4V
= −0.5A/ −50mA
= −3V, IC= −100mA
= −5V, IE=50mA, f=100MHz
= −10V, IE=0A, f=1MHz
Rev.A 1/2
Transistors
z
z
Packaging specifications and h
Package
Code
Type
2SB1197K
hFE values are classified as follows :
Item Q R
h
h
FE
QR
FE
120 to 270 180 to 390
Basic ordering unit (pieces)
2SB1197K
z
FE
Taping
T146
3000
Electrical characteristic curves
−1000
−500
−200
(mA)
−100
−50
−20
−10
−5
−2
−1
−0.5
COLLECTOR CURRENT : IC
−0.2
−0.1
0 −0.4 −0.8 −1.2 −1.6
BASE TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter propagation
characteristics
Ta=25°C
VCE=6V
BE
(V)
−200
Ta=25°C
−180
(mA)
−160
C
−140
−120
−100
−80
−60
−40
COLLECTOR CURRENT : I
−20
0
COLLECTOR TO EMITTER VOLTAGE : V
−1.0mA
0.9mA
−
0.8mA
−
0.7mA
−
0.6mA
−
0.5mA
−
0.4mA
−
0.3mA
−
−0.2mA
−0.1mA
I
B
−40 −8 −12 −16 −20
=
Fig.2 Grounded emitter output
characteristics ( )
−1000
(mV)
−500
CE (sat)
−200
−100
IC/IB
=50
−50
−20
−10
−5
−2
−1
COLLECTOR SATURATION VOLTAGE : V
20
10
−1m
−10m −100m −1
COLLECTOR CURRENT : IC
Fig.5 Collector-emitter saturation
voltage vs. collector current
0mA
Ta=25°C
(A)
−500
−14mA
−16mA
−18mA
(mA)
−20mA
−400
C
−300
−200
−100
COLLECTOR CURRENT : I
0
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
Fig.3 Grounded emitter output
1000
500
(MHz)
T
200
100
50
20
10
5
2
TRANSITION FREQUENCY : f
1
1m 10m 100m 1
Fig.6 Gain bandwidth product vs.
12mA
10mA
−
−
8mA
−
6mA
−
4mA
−
2mA
−
=
B
I
−0.20 −0.4 −0.6 −0.8 −1.0
Ta=25°C
characteristics ( )
Ta=25°C
VCE= −5V
EMITTER CURRENT : I
E
(A)
emitter current
1k
500
FE
200
100
DC CURRENT GAIN : h
CE
(V)
50
20
10
5
2
1
−1m −10m −100m −1
COLLECTOR CURRENT : I
VCE= −3V
−2V
−1V
Fig.4 DC current gain vs.
collector current
1000
(pF)
(pF)
500
200
100
50
20
10
5
2
1
COLLECTOR OUTPUT CAPACITANCE : Cob
EMITTER INPUT CAPACITANCE : Cib
−0.1 −1 −10 −100
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
C
ib
C
ob
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta=25°C
C
(A)
Ta=25°C
=
1MHz
f
I
E
=
0A
CB
EB
(V)
(V)
Rev.A 2/2
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commer c i a l l y
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this documentare designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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