Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA985 2SA985A
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2275/2275A
·High breakdown voltage
APPLICATIONS
·For low frequency and high frequency
power amplifer applicatons
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA985 -120
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B Base current -0.3 A
B
Collector-base voltage
2SA985A
Open emitter
V
-150
2SA985 -120
Collector-emitter voltage
2SA985A
Open base
V
-150
Emitter-base voltage Open collector -5 V
Collector current -1.5 A
Collector current-peak -3.0 A
Ta=25℃ 1.5
P
T
Total power dissipation
W
TC=25℃ 25
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA985 2SA985A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SA985 -120
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA985A
IC=-25mA ,IB=0
V
-150
V
V
I
I
h
h
C
h
CEsat
BEsat
CBO
EBO
FE-1
FE-2
OB
f
T
FE-2
Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.3 -2.0 V
Base-emitter saturation voltage IC=-1A; IB=-0.1A -0.9 -1.5 V
Collector cut-off current VCB=-120V; IE=0 -1.0
Emitter cut-off current VEB=-3V; IC=0 -1.0
DC current gain IC=-5mA ; VCE=-5V 35
DC current gain IC=-0.3A ; VCE=-5V 60 150 320
Output capacitance IE=0 ; VCB=-10V,f=1MHz 29 pF
Transition frequency IC=-0.2A ; VCE=-5V 180 MHz
Classifications
μA
μA
R Q P
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA985 2SA985A
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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