Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA959
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
APPLICATIONS
·For high power audio ,stepping
motor and other linear applications
·Relay or solenoid drviers
·DC-DC converters inverters
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
C
T
j
stg
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -7 V
Collector current -10 A
T
Collector power dissipation
Junction temperature 150
Storage temperature -65~200
=25℃
C
100 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal resistance junction to case 0.98 ℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA959
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=-50mA ;IB=0 -100 V
Collector-base breakdown voltage IC=-1m A ;IE=0
Emitter-base breakdown voltage IE=-1mA ;IC=0
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V
Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V
Collector cut-off current VCB=-100V; IE=0 -0.1 mA
Emitter cut-off current VEB=-7V; IC=0 -0.1 mA
DC current gain IC=-5A ; VCE=-5V 30 200
2
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA959
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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