Page 1
Transistor
2SA921
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
Features
■
●
High collector to emitter voltage V
●
Low noise voltage NV.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
f
T
NV
.
CEO
Ratings
–120
–120
–55 ~ +150
Unit
V
V
–5
–50
–20
250
150
V
mA
mA
mW
˚C
˚C
Conditions
VCB = –50V, IE = 0
VCE = –50V, IB = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –2mA
IC = –20mA, IB = –2mA
VCB = –5V, IE = 2mA, f = 200MHz
VCE = –40V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function FLAT
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
min
typ
–120
–120
–5
180
200
0.45
2.3±0.2
+0.2
–0.1
Unit: mm
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
max
–100
–1
520
– 0.6
150
Unit
nA
µA
V
V
V
V
MHz
mV
*
hFE Rank classification
Rank R S
h
FE
180 ~ 360 260 ~ 520
1
Page 2
Transistor
2SA921
PC—Ta IC—V
500
)
450
mW
(
400
C
350
300
250
200
150
100
50
Collector power dissipation P
0
0 20016040 12080
Ambient temperature Ta (˚C
V
CE(sat)—IC
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10 –100– 0.3 –3 –30
25˚C
Ta=75˚C
–25˚C
Collector current IC (mA
)
IC/IB=10
)
CE
–24
–20
)
mA
(
–16
C
–12
–8
Collector current I
–4
0
0 –12–10–8–2 –6–4
IB=–50µA
Collector to emitter voltage VCE (V
hFE—I
C
1000
900
FE
800
700
600
500
400
300
200
Forward current transfer ratio h
100
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Ta=75˚C
25˚C
–25˚C
VCE=–5V
Collector current IC (mA
Ta=25˚C
–45µA
–40µA
–35µA
–30µA
–25µA
–20µA
–15µA
–10µA
–5µA
)
–60
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
320
280
)
MHz
240
(
T
200
160
120
80
Transition frequency f
40
0
0.1 1 10 1000.3 3 30
IC—V
BE
VCE=–5V
25˚C
Ta=75˚C
fT—I
–25˚C
E
VCB=–5V
Ta=25˚C
Emitter current IE (mA
)
)
Cob—V
10
)
9
pF
(
8
ob
7
6
5
4
3
2
1
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
Ta=25˚C
)
mV
(
Noise voltage NV
)
NV — I
C
120
VCE=–10V
G
=80dB
V
Function=FLAT
100
80
60
40
20
0
– 0.01 – 0.03 – 0.1 – 0.3 –1
Rg=100kΩ
22kΩ
4.7kΩ
Collector current IC (mA
)
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