Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA907/908/909
DESCRIPTION
·With TO-3 package
·Complement to type 2SC1584/1585/1586
APPLICATIONS
·For power switching and general purpose
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA907 -100
V
V
V
CBO
CEO
EBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector -6 V
2SA908 -150
2SA909
2SA907 -100
2SA908 -150
2SA909
Open emitter
Open base
V
-200
V
-200
I
C
I
B Base current -5 A
B
P
C
T
j
T
stg
Collector current -15 A
T
Collector power dissipation
Junction temperature 150
Storage temperature -65~150
=25℃
C
150 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA907/908/909
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SA907 -100
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
Collector-emitter
breakdown voltage
2SA908 -150
2SA909
I
=-50mA ;IB=0
C
V
-200
Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V
2SA907 VCB=-100V; IE=0
Collector cut-off current
2SA908 VCB=-150V; IE=0
2SA909 V
=-200V; IE=0
CB
-1.0 mA
Emitter cut-off current VEB=-6V; IC=0 -1.0 mA
FE
f
T
DC current gain IC=-5A ; VCE=-4V 30
Transition frequency IC=-0.5A ; VCE=-12V 10 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA907/908/909
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Loading...