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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA886
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SC1847
·Low collector-emitter saturation voltage
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute Maximun Ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -50 V
Collector-emitter voltage Open base -40 V
Emitter-base voltage Open collector -5 V
Collector current -1.5 A
Collector current-peak -3.0 A
Collector power dissipation
℃)
T
=25℃
C
1.2*
5*
1
2
W
T
j
T
stg
Note) *1: Without heat sink
Junction temperature 150
Storage temperature -55~150
*2: With a 100 × 100 × 2 mm A1 heat sink
℃
℃
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA886
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
C
FE
OB
f
T
Collector-emitter breakdown voltage IC=-2mA;IB=0 -40 V
Collector-base breakdown voltage IC=-1mA ;IE=0 -50 V
Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -1.0 V
Base-emitter saturation voltage IC=-2A ;IB=-0.2A B -1.5 V
Collector cut-off current VCB=-20V; IE=0 -1 μA
Collector cut-off current VCE=-10V; IB=0 -100 μA
Emitter cut-off current VEB=-5V; IC=0 -10 μA
DC current gain IC=-1A ; VCE=-5V 80 220
Output capacitance IE=0 ; VCB=-20V;f=1MHz 45 pF
Transition frequency IC=0.5A ; VCB=-5V,f=200MHz 150 MHz
hFE Classifications
Q R
80-160 120-220
2
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA886
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA886
4
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