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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA885
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SC1846
·Low collector-emitter saturation voltage
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute Maximun Ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -45 V
Collector-emitter voltage Open base -35 V
Emitter-base voltage Open collector -5 V
Collector current (DC) -1 A
Collector current-peak -1.5 A
Collector power dissipation TC=25℃
℃)
1.2*
5*
1
2
W
T
j
T
stg
Note) *1: Without heat sink
Junction temperature 150
Storage temperature -55~150
*2: With a 100 × 100 × 2 mm A1 heat sink
℃
℃
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA885
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
h
Collector-emitter breakdown voltage IC=-2mA;IB=0 -35 V
I
Collector-base breakdown voltage
=-10μA ;IE=0
C
-45 V
Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA -0.5 V
Collector cut-off current VCB=-20V; IE=0 -0.1
Collector cut-off current VCE=-20V; IB=0 -100
Emitter cut-off current VEB=-5V; IC=0 -10
μA
μA
μA
DC current gain IC=-0.5A ; VCE=-10V 85 340
DC current gain IC=-1A ; VCE=-5V 50
Output capacitance IE=0 ; VCB=-10V;f=1MHz 20 30 pF
Transition frequency IC=50mA ; VCB=-10V,f=200MHz 200 MHz
Classifications
FE-1
Q R S
85-170 120-240 170-340
2
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA885
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA885
4
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA885
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