Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA882
DESCRIPTION
·With TO-3 package
·Excellent Safe Operating Area
APPLICATIONS
·For power and switching applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
C
T
j
stg
Collector-base voltage Open emitter -130 V
Collector-emitter voltage Open base -130 V
Emitter-base voltage Open collector -5 V
Collector current -7 A
T
Collector power dissipation
Junction temperature 150
Storage temperature -65~200
=25℃
C
100 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-c
Thermal resistance junction to case 1.52
℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA882
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
I
CBO
I
EBO
h
h
BE
FE-1
FE-2
Collector-emitter breakdown voltage IC=-30mA ;IB=0 -130 V
Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V
Collector-emitter saturation voltage IC=-7A ;IB=-1.5A B -3.0 V
Base-emitter on voltage IC=-3A ; VCE=-4V -1.6 V
Collector cut-off current VCE=-130V; IB=0 -0.1 mA
Emitter cut-off current VEB=-5V; IC=0 -0.1 mA
DC current gain IC=-1A ; VCE=-4V 40
DC current gain IC=-3A ; VCE=-4V 20
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA882
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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