Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA877 2SA878
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA877 -80
V
V
V
CBO
CEO
EBO
I
C
Collector-base voltage
2SA878
2SA877 -80
Collector-emitter voltage
2SA878
Emitter-base voltage Open collector -6 V
Collector current -10 A
Open emitter
Open base
V
-120
V
-120
T
P
C
T
j
T
stg
Collector power dissipation
Junction temperature 150
Storage temperature -55~150
=25℃
C
100 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA877 2SA878
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
C
Collector-emitter
breakdown voltage
2SA878
I
=-0.1A ;IB=0
C
V
-120
Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V
2SA877 VCB=-80V; IE=0
2SA877 -80
Collector cut-off current
-0.1 mA
2SA878 VCB=-120V; IE=0
Emitter cut-off current VEB=-6V; IC=0 -0.1 mA
FE
OB
f
T
DC current gain IC=-3A ; VCE=-4V 50
Output capacitance IE=0 ; VCB=-10V; f=1.0MHz 255 pF
Transition frequency IC=-1A ; VCE=-12V 15 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA877 2SA878
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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