Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA839
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1669
·High breakdown voltage
APPLICATIONS
·Audio power amplifier applications
·Driver stage amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
I
E
C
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -5 V
Collector current -1.5 A
Emitter current 1.5 A
Collector power dissipation TC=25℃ 25 W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA839
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
I
CBO
I
EBO
h
h
C
BE
FE-1
FE-2
OB
f
T
Collector-emitter breakdown voltage IC=-10mA ,IB=0 -150 V
Emitter-base breakdown voltage IE=-1mA ,IC=0 -5 V
Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.5 V
Base-emitter on voltage IC=-0.5A ; VCE=-10V -1.0 V
Collector cut-off current VCB=-100V; IE=0 -20
Emitter cut-off current VEB=-5V; IC=0 -10
μA
μA
DC current gain IC=-0.5A ; VCE=-10V 40 240
DC current gain IC=-1A ; VCE=-10V 20
Output capacitance IE=0 ; VCB=-10V;f=1MHz 100 pF
Transition frequency IC=-0.5A ; VCE=-10V 6 MHz
h
Classifications
FE-1
R O Y
40-80 70-140 120-240
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA839
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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