Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA814 2SA815
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1624/1625
·High breakdown voltage
APPLICATIONS
·Medium power amplifier applications
·Driver stage amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA814 -120
V
V
V
CBO
CEO
EBO
I
C
I
E
Collector-base voltage
2SA815
2SA814 -120
Collector-emitter voltage
2SA815
Emitter-base voltage Open collector -5 V
Collector current -1 A
Emitter current 1 A
Open emitter
Open base
V
-100
V
-100
P
C
T
j
T
stg
Collector power dissipation TC=25℃ 15 W
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA814 2SA815
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
I
CBO
I
EBO
h
h
C
BE
FE-1
FE-2
OB
Collector-emitter
breakdown voltage
2SA815
I
=-10mA ,IB=0
C
V
-100
Emitter-base breakdown voltage IE=-1.0mA ,IC=0 -5 V
Collector-emitter saturation voltage IC=-500mA; IB=-50mA B -0.5 V
Base-emitter on voltage IC=-500mA ; VCE=-5V -1.0 V
2SA814 -120
Collector cut-off current VCB=-50V; IE=0 -1.0
Emitter cut-off current VEB=-5V; IC=0 -1.0
μA
μA
DC current gain IC=-150mA ; VCE=-5V 70 240
DC current gain IC=-500mA ; VCE=-5V 40
Collector output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF
f
T
Transition frequency IC=-150mA ; VCE=-5V 10 30 MHz
h
Classifications
FE-1
O Y
70-140 120-240
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA814 2SA815
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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