Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA807
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·Complement to type 2SC1618
APPLICATIONS
·For power amplifier and general purpose
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -3 A
B
P
C
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -6 V
Collector current -6 A
Collector power dissipation TC=25℃ 50 W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -65~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA807
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
Collector-emitter breakdown voltage IC=-50mA IB=0 -60 V
Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V
Collector cut-off current VCB=-60V; IE=0 -1.0 mA
Emitter cut-off current VEB=-6V; IC=0 -1.0 mA
DC current gain IC=-3A ; VCE=-4V 20
Transition frequency IC=-0.5A ; VCE=-12V 10 MHz
Switching times
t
r
t
stg
t
f
Rise time 1.2 μs
Storage time 1.8 μs
Fall time
VCC=-10V;IC=-3A; RL=3Ω
=-0.3A; IB2=50mA
I
B1
0.3 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA807
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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