Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA775
DESCRIPTION
·With TO-220 package
·High breakdown voltage
APPLICATIONS
·For TV vertical output amplifier
applicatons
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -4 V
Collector current -0.7 A
Collector power dissipation TC=25℃ 12.5 W
Junction temperature 150 ℃
T
stg
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA775
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
Collector-emitter breakdown voltage IC=-1mA ,IB=0 B -100 V
Collector-base breakdown voltage IC=-10μA ,IE=0 -100 V
Emitter-base breakdown voltage IE=-10μA ,IC=0 -4 V
Collector-emitter saturation voltage IC=-500mA; IB=-50mA B -1.0 V
Collector cut-off current VCB=-100V; IE=0 -1.0 μA
Emitter cut-off current VEB=-4V; IC=0 -1.0 μA
DC current gain IC=-50mA ; VCE=-4V 50
Transition frequency IC=-50mA ; VCE=-4V 30 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA775
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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