Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA770 2SA771
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1985/1986
·Low collector saturation voltage
APPLICATIONS
·For general and industrial
purpose applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA770 -60
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -3 A
B
Collector-base voltage
2SA771
2SA770 -60
Collector-emitter voltage
2SA771
Emitter-base voltage Open collector -6 V
Collector current -6 A
Open emitter
Open base
V
-80
V
-80
P
C
T
j
T
stg
Collector power dissipation TC=25℃ 40 W
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA770 2SA771
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V
Collector
cut-off current
Emitter cut-off current VEB=-6V; IC=0 -1.0 mA
DC current gain IC=-1A ; VCE=-4V 40
Transition frequency IC=-0.5A ; VCE=-12V 10 MHz
Switching times
t
r
t
stg
Rise time 0.9 μs
Storage time 1.0 μs
2SA770 -60
2SA771
=-25mA ,IB=0
I
C
-80
V
2SA770 VCB=-60V; IE=0
-1.0 mA
2SA771 V
=-80V; IE=0
CB
IC=-3A ; VCC=-9V
=-IB2=-0.4A;RL=3Ω
I
B1
t
f
Fall time
0.1 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA770 2SA771
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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