Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA766
DESCRIPTION
·With TO-66 package
·High power dissipation
·Complement to type 2SC1450
APPLICATIONS
·Line-operated vertical deflection output
·Medium power amplifier
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -5 V
Collector current -0.4 A
Collector current-peak -1.2 A
T
Collector power dissipation
≤80℃
C
20 W
T
j
T
stg
Junction temperature 150
Storage temperature -65~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA766
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
CEO(SUS)
Collector-emitter sustaining voltage
=-0.2A ;L=25mH,RBE=5kΩ
C
-150 V
V
(BR)EBO
V
CEsat
V
V
I
CBO
h
h
BE-1
BE-2
FE-1
FE-2
f
T
Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V
Collector-emitter saturation voltage IC=-1A; IB=-0.1A -1.0 V
Base-emitter saturation voltage IC=-0.1A ; VCE=-5V -0.8 V
Base-emitter saturation voltage IC=-0.5A ; VCE=-5V -1.0 V
Collector cut-off current VCB=-60V; IE=0 -30
μA
DC current gain IC=-0.1A ; VCE=-5V 35 150
DC current gain IC=-0.5A ; VCE=-5V 35
Transition frequency IE=0.1A ; VCB=-10V 15 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA766
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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