Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA765
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
APPLICATIONS
·Desinged for general-purpose power
amplifier and applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
Collector-base voltage Open emitter -80 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -6 V
Collector current -6 A
Collector power dissipation TC=25℃ 40 W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA765
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V
Collector-base breakdown voltage IC=-1mA ;IE=0 -80 V
Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.5 V
Base-emitter saturation voltage IC=-4A; IB=-0.4A -2.0 V
Collector cut-off current VCB=-80V; IE=0 -10
Emitter cut-off current VEB=-6V; IC=0 -10
μA
μA
DC current gain IC=-1A ; VCE=-4V 50
Transition frequency IC=-0.5A ; VCE=-12V 10 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA765
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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