Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA757
DESCRIPTION
·With TO-3 package
·Complement to type 2SC897
APPLICATIONS
·For audio amplifier power output
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -120 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -6 V
Collector current -7 A
Collector current-peak -12 A
Collector power dissipation TC=25℃ 60 W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA757
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=-50mA ;RBE=∞
C
-100 V
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
h
FE-1
h
FE-2
f
T
h
Collector-base breakdown voltage IC=-5mA ,IE=0 -120 V
Emitter-base breakdown voltage IE=-5mA ,IC=0 -5 V
Collector-emitter saturation voltage IC=-5A; IB=-1A -1.8 V
Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V
Collector cut-off current VCB=-30V; IE=0 -1 mA
DC current gain IC=-1A ; VCE=-5V 25 200
DC current gain IC=-5A ; VCE=-5V 20
Transition frequency IC=-1A ; VCE=-5V 24 MHz
Classifications
FE-1
A B C
25-60 50-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA757
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Loading...