Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA756
DESCRIPTION
·With TO-3 package
·Complement to type 2SC1030
APPLICATIONS
·For audio amplifier power output
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -6 V
Collector current -6 A
Collector power dissipation TC=25℃ 50 W
Junction temperature 150 ℃
T
stg
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA756
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
h
FE-1
h
FE-2
f
T
h
Collector-emitter breakdown voltage IC=-50mA ;RBE=∞ -80 V
Collector-base breakdown voltage IC=-5mA ,IE=0 -100 V
Emitter-base breakdown voltage IE=-5mA ,IC=0 -6 V
Collector-emitter saturation voltage IC=-5A; IB=-1A -1.8 V
Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V
Collector cut-off current VCB=-30V; IE=0 -1 mA
DC current gain IC=-1A ; VCE=-5V 35 200
DC current gain IC=-5A ; VCE=-5V 20
Transition frequency IC=-1A ; VCE=-5V 20 MHz
Classifications
FE-1
A B C
35-70 60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA756
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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