Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA755
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1419
·Note:Type 2SA754 with short pin
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter -50 V
Collector-emitter voltage Open base -50 V
Emitter-base voltage Open collector -4 V
Collector current -2 A
T
Collector power dissipation
Junction temperature 150
=25℃
C
20 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA755
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
h
FE-1
h
FE-2
f
T
Collector-emitter breakdown voltage IC=-50mA ,RBE=∞ -50 V
Collector-base breakdown voltage IC=-5mA ,IE=0 -50 V
Emitter-base breakdown voltage IE=-5mA ,IC=0 -4 V
Collector-emitter saturation voltage IC=-1.5A; IB=-0.15A -1.3 V
Base-emitter on voltage IC=-1A ; VCE=-4V -1.5 V
Collector cut-off current VCB=-20V; IE=0 -100 μA
DC current gain IC=-1A ; VCE=-4V 35 200
DC current gain IC=-0.1A ; VCE=-4V 35
Transition frequency IC=-0.5A ; VCE=-4V 50 MHz
h
Classifications
FE-1
A B C
35-70 60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA755
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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