Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA753
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·Complement to type 2SC1343
APPLICATIONS
·For 100W audio amplifier power output
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -140 V
Collector-emitter voltage Open base -110 V
Emitter-base voltage Open collector -5 V
Collector current -10 A
Collector current-peak -12 A
Collector power dissipation TC=25℃ 100 W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA753
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
h
FE-1
h
FE-2
f
T
h
Collector-emitter breakdown voltage IC=-50mA ;RBE=∞ -110 V
Collector-base breakdown voltage IC=-5mA ;IE=0 -140 V
Emitter-base breakdown voltage IE=-5mA ;IC=0 -5 V
Collector-emitter saturation voltage IC=-5A; IB=-1A -1.5 V
Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V
Collector cut-off current VCB=-30V; IE=0 -1 mA
DC current gain IC=-1A ; VCE=-5V 30 200
DC current gain IC=-10A ; VCE=-5V 15
Transition frequency IC=-1A ; VCE=-5V 20 MHz
Classifications
FE-1
A B C
30-60 50-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA753
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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