Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA738
DESCRIPTION ·
·With TO-126 package
·High current
·Complement to type 2SC1368
APPLICATIONS
·Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
t
Collector-base voltage Open emitter -25 V
Collector-emitter voltage Open base -25 V
Emitter -base voltage Open collector -5 V
Collector current -1.5 A
Collector current-Peak -2.0 A
Total power dissipation TC=25℃ 8 W
℃)
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -65~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA738
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-emitter breakdown voltage IC=-10mA; IB=0 -25 V
Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -0.5 V
Base-emitter voltage IC=-500mA ; VCE=-2V -1.0 V
Collector cut-off current VCB=-25V; IE=0 -1.0 μA
Emitter cut-off current VEB=-5V; IC=0 -1.0 μA
DC current gain IC=-150mA ; VCE=-2V 35 320
DC current gain IC=-500mA ; VCE=-2V 25
Transition frequency IC=-50mA; VCE=-5V 160 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA738
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Loading...